Name: RFM12N10
Brand: Harris Corporation
SKU: RFM12N10
Availability: InStock

REF: RFM12N10 Harris Corporation

RFM12N10

N-CHANNEL POWER MOSFET

RFM12N10 is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. N-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-204AA, TO-3.

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In Stock: 7,507

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	200mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	850 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	75W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3
Package / Case	TO-204AA, TO-3