RFG30P05 - Harris Corporation - Transistors - FETs, MOSFETs - Single
REF: RFG30P05 Harris Corporation
RFG30P05

Harris Corporation

P-CHANNEL POWER MOSFET

RFG30P05 is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. P-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-3.

In Stock: 1,617

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)50 V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs65mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs170 nC @ 20 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3200 pF @ 25 V
FET Feature-
Power Dissipation (Max)120W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

Need a Quote for RFG30P05?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →