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RFD8P06ESM

In Stock: 4,343
RFD8P06ESM - Harris Corporation - Transistors - FETs, MOSFETs - Single
REF: RFD8P06ESM Harris Corporation
RFD8P06ESM

Harris Corporation

P-CHANNEL POWER MOSFET

RFD8P06ESM is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. P-CHANNEL POWER MOSFET. Key specifications: mounting type Surface Mount, package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

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In Stock: 4,343

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C8A
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageTO-252-3 (DPAK)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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