Name: RFD4N06L
Brand: Harris Corporation
SKU: RFD4N06L
Price: 0.28 USD
Availability: InStock

REF: RFD4N06L Harris Corporation

RFD4N06L

N-CHANNEL POWER MOSFET

RFD4N06L is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. N-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA.

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In Stock: 1,424

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	600mOhm @ 1A, 5V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V

Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	30W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-Pak
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA