RFD16N05L - Harris Corporation - Transistors - FETs, MOSFETs - Single
REF: RFD16N05L Harris Corporation
RFD16N05L

Harris Corporation

N-CHANNEL POWER MOSFET

RFD16N05L is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. N-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA.

In Stock: 33,102

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)50 V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Rds On (Max) @ Id, Vgs47mOhm @ 16A, 5V
Vgs(th) (Max) @ Id2V @ 250mA
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251AA
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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