Name: RF1S4N100SM9A
Brand: Harris Corporation
SKU: RF1S4N100SM9A
Price: 3.13 USD
Availability: InStock

REF: RF1S4N100SM9A Harris Corporation

RF1S4N100SM9A

Harris Corporation

MOSFET N-CH 1000V 4.3A TO263AB

RF1S4N100SM9A is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. MOSFET N-CH 1000V 4.3A TO263AB. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

Datasheet Request a Quote

In Stock: 187

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	3.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263AB
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB