Name: RF1S25N06
Brand: Harris Corporation
SKU: RF1S25N06
Availability: InStock

REF: RF1S25N06 Harris Corporation

RF1S25N06

25A, 60V, 0.047 OHM, N-CHANNEL P

RF1S25N06 is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. 25A, 60V, 0.047 OHM, N-CHANNEL P. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA.

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In Stock: 7,257

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	47mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 20 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	975 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	72W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK (TO-262)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA