RF1S23N06LESM - Harris Corporation - Transistors - FETs, MOSFETs - Single
REF: RF1S23N06LESM Harris Corporation
RF1S23N06LESM

Harris Corporation

N-CHANNEL POWER MOSFET

RF1S23N06LESM is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. N-CHANNEL POWER MOSFET. Key specifications: mounting type Surface Mount, package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

In Stock: 5,549

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C23A
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageTO-263AB
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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