IRFF9130 - Harris Corporation - Transistors - FETs, MOSFETs - Single
REF: IRFF9130 Harris Corporation
IRFF9130

Harris Corporation

6.5A, 100V, 0.3OHM, P-CHANNEL MO

IRFF9130 is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. 6.5A, 100V, 0.3OHM, P-CHANNEL MO. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-205AF Metal Can.

In Stock: 1,091

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs300mOhm @ 3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds500 pF @ 25 V
FET Feature-
Power Dissipation (Max)25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-205AF (TO-39)
Package / CaseTO-205AF Metal Can

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