Name: IRFF213
Brand: Harris Corporation
SKU: IRFF213
Availability: InStock

REF: IRFF213 Harris Corporation

IRFF213

N-CHANNEL POWER MOSFET

IRFF213 is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. N-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-205AF Metal Can.

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In Stock: 4,022

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.4Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.5 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	135 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	15W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-205AF (TO-39)
Package / Case	TO-205AF Metal Can