Name: IRFD213
Brand: Harris Corporation
SKU: IRFD213
Price: 0.59 USD
Availability: InStock

REF: IRFD213 Harris Corporation

IRFD213

MOSFET N-CH 250V 450MA 4DIP

IRFD213 is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. MOSFET N-CH 250V 450MA 4DIP. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case 4-DIP (0.300", 7.62mm).

Datasheet Request a Quote

In Stock: 5,563

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	2Ohm @ 270mA, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.2 nC @ 10 V

Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	140 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	4-HVMDIP
Package / Case	4-DIP (0.300", 7.62mm)