Name: IRFD111
Brand: Harris Corporation
SKU: IRFD111
Availability: InStock

REF: IRFD111 Harris Corporation

IRFD111

SMALL SIGNAL N-CHANNEL MOSFET

IRFD111 is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. SMALL SIGNAL N-CHANNEL MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case 4-DIP (0.300", 7.62mm).

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In Stock: 8,203

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	600mOhm @ 800mA, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	135 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	4-DIP, Hexdip
Package / Case	4-DIP (0.300", 7.62mm)