Name: IRF721R
Brand: Harris Corporation
SKU: IRF721R
Availability: InStock

REF: IRF721R Harris Corporation

IRF721R

N-CHANNEL POWER MOSFET

IRF721R is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. N-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

Datasheet Request a Quote

In Stock: 5,236

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	350 V
Current - Continuous Drain (Id) @ 25°C	3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.8Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	360 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	50W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3