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IRF630

In Stock: 23,207
IRF630 - Harris Corporation - Transistors - FETs, MOSFETs - Single
REF: IRF630 Harris Corporation
IRF630

Harris Corporation

MOSFET N-CH 200V 9A TO220AB

IRF630 is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. MOSFET N-CH 200V 9A TO220AB. Key specifications: mounting type Through Hole, package / case TO-220-3.

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In Stock: 23,207

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs400mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs43 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds800 pF @ 25 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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