Name: IRF620
Brand: Harris Corporation
SKU: IRF620
Availability: InStock

REF: IRF620 Harris Corporation

IRF620

5.0A 200V 0.800 OHM N-CHANNEL

IRF620 is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. 5.0A 200V 0.800 OHM N-CHANNEL. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 150°C (TJ), package / case TO-220-3.

Datasheet Request a Quote

In Stock: 6,898

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	800mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	350 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	70W (Tc)
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3