Name: IRF610
Brand: Harris Corporation
SKU: IRF610
Availability: InStock

REF: IRF610 Harris Corporation

IRF610

3.3A 200V 1.500 OHM N-CHANNEL

IRF610 is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. 3.3A 200V 1.500 OHM N-CHANNEL. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

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In Stock: 8,150

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.2 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	140 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	36W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3