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HFA3127MJ/883

In Stock: 1,027
HFA3127MJ/883 - Harris Corporation - Transistors - Bipolar (BJT) - RF
REF: HFA3127MJ/883 Harris Corporation
HFA3127MJ/883

Harris Corporation

DUAL MARKED (5962-9474901MEA)

HFA3127MJ/883 is a Transistors - Bipolar (BJT) - RF manufactured by Harris Corporation. DUAL MARKED (5962-9474901MEA). Key specifications: mounting type Through Hole, operating temperature -55°C ~ 125°C (TJ), package / case 16-CDIP (0.300", 7.62mm), current - collector (ic) (max) 65mA.

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In Stock: 1,027

Specifications

13 parameters
Product StatusActive
Transistor Type5 NPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)3.5dB @ 1GHz
Gain-
Power - Max150mW
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10mA, 2V
Current - Collector (Ic) (Max)65mA
Operating Temperature-55°C ~ 125°C (TJ)
Mounting TypeThrough Hole
Package / Case16-CDIP (0.300", 7.62mm)
Supplier Device Package16-CERDIP

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