HFA3127B - Harris Corporation - Transistors - Bipolar (BJT) - RF
REF: HFA3127B Harris Corporation
HFA3127B

Harris Corporation

RF SMALL SIGNAL TRANSISTOR

HFA3127B is a Transistors - Bipolar (BJT) - RF manufactured by Harris Corporation. RF SMALL SIGNAL TRANSISTOR. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 16-SOIC (0.154", 3.90mm Width), current - collector (ic) (max) 65mA.

In Stock: 1,720

Specifications

13 parameters
Product StatusObsolete
Transistor Type5 NPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)3.5dB @ 1GHz
Gain-
Power - Max150mW
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10mA, 2V
Current - Collector (Ic) (Max)65mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case16-SOIC (0.154", 3.90mm Width)
Supplier Device Package16-SOIC

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