2N6895 - Harris Corporation - Transistors - FETs, MOSFETs - Single
REF: 2N6895 Harris Corporation
2N6895

Harris Corporation

P-CHANNEL, MOSFET

2N6895 is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. P-CHANNEL, MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-205AF Metal Can.

In Stock: 2,258

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C1.16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.65Ohm @ 740mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds150 pF @ 25 V
FET Feature-
Power Dissipation (Max)8.33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-205AF (TO-39)
Package / CaseTO-205AF Metal Can

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