2N6792TX - Harris Corporation - Transistors - FETs, MOSFETs - Single
REF: 2N6792TX Harris Corporation
2N6792TX

Harris Corporation

2A, 400V, 1.8OHM, N-CHANNEL

2N6792TX is a Transistors - FETs, MOSFETs - Single manufactured by Harris Corporation. 2A, 400V, 1.8OHM, N-CHANNEL. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-205AF Metal Can.

In Stock: 335

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)400 V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.8Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 25 V
FET Feature-
Power Dissipation (Max)20W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-205AF (TO-39)
Package / CaseTO-205AF Metal Can

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