Name: GT52N10D5
Brand: Goford Semiconductor
SKU: GT52N10D5
Price: 1.64 USD
Availability: InStock

REF: GT52N10D5 Goford Semiconductor

GT52N10D5

N100V,RD(MAX)<7.5M@10V,RD(MAX)<1

GT52N10D5 is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N100V,RD(MAX)<7.5M@10V,RD(MAX)<1. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 12,735

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	71A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44.5 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2626 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	79W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-DFN (5.2x5.86)
Package / Case	8-PowerTDFN