Name: GT105N10F
Brand: Goford Semiconductor
SKU: GT105N10F
Price: 1.47 USD
Availability: InStock

REF: GT105N10F Goford Semiconductor

GT105N10F

N100V,RD(MAX)<10.5M@10V,RD(MAX)<

GT105N10F is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N100V,RD(MAX)<10.5M@10V,RD(MAX)<. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3 Full Pack.

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In Stock: 70

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	10.5mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	54 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	20.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220F
Package / Case	TO-220-3 Full Pack