Name: GT100N12T
Brand: Goford Semiconductor
SKU: GT100N12T
Price: 1.82 USD
Availability: InStock

REF: GT100N12T Goford Semiconductor

GT100N12T

N120V,RD(MAX)<10M@10V,VTH2.5V~3.

GT100N12T is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N120V,RD(MAX)<10M@10V,VTH2.5V~3.. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

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In Stock: 70

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120 V
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	10mOhm @ 35A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3050 pF @ 60 V
FET Feature	-
Power Dissipation (Max)	120W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3