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GT100N12D5

In Stock: 8,438
GT100N12D5 - Goford Semiconductor - Transistors - FETs, MOSFETs - Single
REF: GT100N12D5 Goford Semiconductor
GT100N12D5

Goford Semiconductor

N120V,RD(MAX)<10M@10V,VTH2.5V~3.

GT100N12D5 is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N120V,RD(MAX)<10M@10V,VTH2.5V~3.. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN.

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In Stock: 8,438

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120 V
Current - Continuous Drain (Id) @ 25°C70A
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs10mOhm @ 35A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3050 pF @ 60 V
FET Feature-
Power Dissipation (Max)120W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-DFN (5x6)
Package / Case8-PowerVDFN

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