Name: GT1003D
Brand: Goford Semiconductor
SKU: GT1003D
Price: 0.50 USD
Availability: InStock

REF: GT1003D Goford Semiconductor

GT1003D

N100V,RD(MAX)<130M@10V,RD(MAX)<1

GT1003D is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N100V,RD(MAX)<130M@10V,RD(MAX)<1. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3.

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In Stock: 2,990

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	3A
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	130mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5.2 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	212 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	2W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3L
Package / Case	TO-236-3, SC-59, SOT-23-3