Name: GT035N06T
Brand: Goford Semiconductor
SKU: GT035N06T
Price: 2.11 USD
Availability: InStock

REF: GT035N06T Goford Semiconductor

GT035N06T

N-CH, 60V,170A, RD(MAX)<3.5M@10V

GT035N06T is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N-CH, 60V,170A, RD(MAX)<3.5M@10V. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

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In Stock: 200

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5064 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	215W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3