G86N06K - Goford Semiconductor - Transistors - FETs, MOSFETs - Single
REF: G86N06K Goford Semiconductor
G86N06K

Goford Semiconductor

N60V,RD(MAX)<8.4M@10V,VTH2V~4V ,

G86N06K is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N60V,RD(MAX)<8.4M@10V,VTH2V~4V ,. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

In Stock: 2,454

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C68A
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs8.4mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs77 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2860 pF @ 25 V
FET Feature-
Power Dissipation (Max)88W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252 (DPAK)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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