G70N04T - Goford Semiconductor - Transistors - FETs, MOSFETs - Single
REF: G70N04T Goford Semiconductor
G70N04T

Goford Semiconductor

N40V,RD(MAX)<7M@10V,RD(MAX)<12M@

G70N04T is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N40V,RD(MAX)<7M@10V,RD(MAX)<12M@. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

In Stock: 68

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4010 pF @ 20 V
FET Feature-
Power Dissipation (Max)104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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