G6P06 - Goford Semiconductor - Transistors - FETs, MOSFETs - Single
REF: G6P06 Goford Semiconductor
G6P06

Goford Semiconductor

P60V,RD(MAX)<96M@-10V,RD(MAX)<14

G6P06 is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. P60V,RD(MAX)<96M@-10V,RD(MAX)<14. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width).

In Stock: 4,318

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs96mOhm @ 4A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds930 pF @ 30 V
FET Feature-
Power Dissipation (Max)4.1W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP
Package / Case8-SOIC (0.154", 3.90mm Width)

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