Name: G65P06T
Brand: Goford Semiconductor
SKU: G65P06T
Price: 1.71 USD
Availability: InStock

REF: G65P06T Goford Semiconductor

G65P06T

P-60V,RD(MAX)<18M@-10V,VTH-2.0V~

G65P06T is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. P-60V,RD(MAX)<18M@-10V,VTH-2.0V~. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3.

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In Stock: 20

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5814 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	130W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3