Name: G65P06F
Brand: Goford Semiconductor
SKU: G65P06F
Price: 1.62 USD
Availability: InStock

REF: G65P06F Goford Semiconductor

G65P06F

P-CH, -60V, 65A, RD(MAX)<18M@-10

G65P06F is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. P-CH, -60V, 65A, RD(MAX)<18M@-10. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3 Full Pack.

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In Stock: 85

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6477 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	39W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220F
Package / Case	TO-220-3 Full Pack