G65P06D5 - Goford Semiconductor - Transistors - FETs, MOSFETs - Single
REF: G65P06D5 Goford Semiconductor
G65P06D5

Goford Semiconductor

P60V,RD(MAX)<18M@-10V,VTH-2V~-3V

G65P06D5 is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. P60V,RD(MAX)<18M@-10V,VTH-2V~-3V. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

In Stock: 6,054

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs75 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5814 pF @ 25 V
FET Feature-
Power Dissipation (Max)130W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-DFN (4.9x5.75)
Package / Case8-PowerTDFN

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