Name: G50N03J
Brand: Goford Semiconductor
SKU: G50N03J
Price: 0.65 USD
Availability: InStock

REF: G50N03J Goford Semiconductor

G50N03J

N30V,RD(MAX)<7M@10V,RD(MAX)<12M@

G50N03J is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N30V,RD(MAX)<7M@10V,RD(MAX)<12M@. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-251-3 Stub Leads, IPak.

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In Stock: 4,939

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16.6 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1255 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	48W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-251
Package / Case	TO-251-3 Stub Leads, IPak