G50N03D5 - Goford Semiconductor - Transistors - FETs, MOSFETs - Single
REF: G50N03D5 Goford Semiconductor
G50N03D5

Goford Semiconductor

N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M

G50N03D5 is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

In Stock: 5,000

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38.4 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1784 pF @ 15 V
FET Feature-
Power Dissipation (Max)20W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-DFN (4.9x5.75)
Package / Case8-PowerTDFN

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