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G30N02T

In Stock: 7,483
G30N02T - Goford Semiconductor - Transistors - FETs, MOSFETs - Single
REF: G30N02T Goford Semiconductor
G30N02T

Goford Semiconductor

N20V,RD(MAX)<13M@4.5V,VTH0.5V~1.

G30N02T is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N20V,RD(MAX)<13M@4.5V,VTH0.5V~1.. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

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In Stock: 7,483

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V
Rds On (Max) @ Id, Vgs13mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds900 pF @ 10 V
FET Feature-
Power Dissipation (Max)40W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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