G3035 - Goford Semiconductor - Transistors - FETs, MOSFETs - Single
REF: G3035 Goford Semiconductor
G3035

Goford Semiconductor

P30V,RD(MAX)<59M@-10V,RD(MAX)<75

G3035 is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. P30V,RD(MAX)<59M@-10V,RD(MAX)<75. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3.

In Stock: 9,348

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs59mOhm @ 4A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds650 pF @ 15 V
FET Feature-
Power Dissipation (Max)1.4W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23
Package / CaseTO-236-3, SC-59, SOT-23-3

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