G29 - Goford Semiconductor - Transistors - FETs, MOSFETs - Single
REF: G29 Goford Semiconductor
G29

Goford Semiconductor

P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4

G29 is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3.

In Stock: 1,505

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C6A
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs30mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs12.5 nC @ 10 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds1151 pF @ 10 V
FET Feature-
Power Dissipation (Max)1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23
Package / CaseTO-236-3, SC-59, SOT-23-3

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