G28N03D3 - Goford Semiconductor - Transistors - FETs, MOSFETs - Single
REF: G28N03D3 Goford Semiconductor
G28N03D3

Goford Semiconductor

N30V,RD(MAX)<12M@10V,RD(MAX)<18M

G28N03D3 is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N30V,RD(MAX)<12M@10V,RD(MAX)<18M. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN.

In Stock: 5,000

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs12mOhm @ 16A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds891 pF @ 15 V
FET Feature-
Power Dissipation (Max)20.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-DFN (3.15x3.05)
Package / Case8-PowerVDFN

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