G26P04D5 - Goford Semiconductor - Transistors - FETs, MOSFETs - Single
REF: G26P04D5 Goford Semiconductor
G26P04D5

Goford Semiconductor

P40V,RD(MAX)<18M@-10V,RD(MAX)<22

G26P04D5 is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. P40V,RD(MAX)<18M@-10V,RD(MAX)<22. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

In Stock: 1

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs18mOhm @ 12A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2479 pF @ 20 V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-DFN (4.9x5.75)
Package / Case8-PowerTDFN

Need a Quote for G26P04D5?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →