G23N06K - Goford Semiconductor - Transistors - FETs, MOSFETs - Single
REF: G23N06K Goford Semiconductor
G23N06K

Goford Semiconductor

N60V,RD(MAX)<35M@10V,RD(MAX)<45M

G23N06K is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N60V,RD(MAX)<35M@10V,RD(MAX)<45M. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

In Stock: 2,490

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C23A
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds590 pF @ 15 V
FET Feature-
Power Dissipation (Max)38W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252 (DPAK)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Need a Quote for G23N06K?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →