Name: G2012
Brand: Goford Semiconductor
SKU: G2012
Price: 0.43 USD
Availability: InStock

REF: G2012 Goford Semiconductor

G2012

N20V,RD(MAX)<12M@4.5V,RD(MAX)<18

G2012 is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N20V,RD(MAX)<12M@4.5V,RD(MAX)<18. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-WDFN Exposed Pad.

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In Stock: 3,000

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	12mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V

Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	1255 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-DFN (2x2)
Package / Case	6-WDFN Exposed Pad