G16P03S - Goford Semiconductor - Transistors - FETs, MOSFETs - Single
REF: G16P03S Goford Semiconductor
G16P03S

Goford Semiconductor

P30V,RD(MAX)<12M@-10V,RD(MAX)<18

G16P03S is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. P30V,RD(MAX)<12M@-10V,RD(MAX)<18. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width).

In Stock: 3,143

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C16A
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2800 pF @ 15 V
FET Feature-
Power Dissipation (Max)3W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP
Package / Case8-SOIC (0.154", 3.90mm Width)

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