G12P10K - Goford Semiconductor - Transistors - FETs, MOSFETs - Single
REF: G12P10K Goford Semiconductor
G12P10K

Goford Semiconductor

P100V,RD(MAX)<200M@-10V,RD(MAX)<

G12P10K is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. P100V,RD(MAX)<200M@-10V,RD(MAX)<. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

In Stock: 2,468

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C12A
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs200mOhm @ 6A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1720 pF @ 50 V
FET Feature-
Power Dissipation (Max)57W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252 (DPAK)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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