Name: G11S
Brand: Goford Semiconductor
SKU: G11S
Price: 0.45 USD
Availability: InStock

REF: G11S Goford Semiconductor

G11S

P-20V,RD(MAX)<18.4M@-4.5V,RD(MAX

G11S is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. P-20V,RD(MAX)<18.4M@-4.5V,RD(MAX. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width).

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In Stock: 3,858

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	18.4mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 10 V

Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	2455 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	3.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP
Package / Case	8-SOIC (0.154", 3.90mm Width)