Name: G110N06T
Brand: Goford Semiconductor
SKU: G110N06T
Price: 1.74 USD
Availability: InStock

REF: G110N06T Goford Semiconductor

G110N06T

N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.

G110N06T is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3.

Datasheet Request a Quote

In Stock: 100

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	113 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5538 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	120W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3