G100N03D5 - Goford Semiconductor - Transistors - FETs, MOSFETs - Single
REF: G100N03D5 Goford Semiconductor
G100N03D5

Goford Semiconductor

N-CH, 30V, 100A, RD(MAX)<3.5M@10

G100N03D5 is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N-CH, 30V, 100A, RD(MAX)<3.5M@10. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN.

In Stock: 5,000

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5595 pF @ 50 V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-DFN (4.9x5.75)
Package / Case8-PowerTDFN

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