Name: G1002L
Brand: Goford Semiconductor
SKU: G1002L
Price: 0.52 USD
Availability: InStock

REF: G1002L Goford Semiconductor

G1002L

N100V,RD(MAX)<250M@10V,VTH1.2V~2

G1002L is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N100V,RD(MAX)<250M@10V,VTH1.2V~2. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3.

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In Stock: 3,000

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	2A
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	250mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	413 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	1.3W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3L
Package / Case	TO-236-3, SC-59, SOT-23-3