G09P02L - Goford Semiconductor - Transistors - FETs, MOSFETs - Single
REF: G09P02L Goford Semiconductor
G09P02L

Goford Semiconductor

P20V,RD(MAX)<23M@-4.5V,RD(MAX)<3

G09P02L is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. P20V,RD(MAX)<23M@-4.5V,RD(MAX)<3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3.

In Stock: 3,488

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs23mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 4.5 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds620 pF @ 10 V
FET Feature-
Power Dissipation (Max)2.2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3

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