G08P06D3 - Goford Semiconductor - Transistors - FETs, MOSFETs - Single
REF: G08P06D3 Goford Semiconductor
G08P06D3

Goford Semiconductor

P60V,RD(MAX)<52M@-10V,VTH-2V~-3.

G08P06D3 is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. P60V,RD(MAX)<52M@-10V,VTH-2V~-3.. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN.

In Stock: 5,000

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs52mOhm @ 6A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2972 pF @ 30 V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-DFN (3.15x3.05)
Package / Case8-PowerVDFN

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