Name: G08N06S
Brand: Goford Semiconductor
SKU: G08N06S
Price: 0.51 USD
Availability: InStock

REF: G08N06S Goford Semiconductor

G08N06S

N60V, RD(MAX)<30M@10V,RD(MAX)<40

G08N06S is a Transistors - FETs, MOSFETs - Single manufactured by Goford Semiconductor. N60V, RD(MAX)<30M@10V,RD(MAX)<40. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width).

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In Stock: 6,608

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	30mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	979 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP
Package / Case	8-SOIC (0.154", 3.90mm Width)